Features of Vanadium Impurity States in Lead Tellurideстатья
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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Temperature dependences of resistivity, magnetic susceptibility, and charge-carrier concentration and mobility in single-crystalline PbTe:V samples with a varied impurity content are investigated. It is shown that vanadium forms a donor level located similar to 20 meV below the conduction-band bottom. The electron mobility is as high as 10(5) cm(2) V(-1) s(-1) in the samples with N(V) <= 0.21 at % and proves to be more than an order of magnitude higher in the samples with the highest vanadium content N(V) = 0.26 at %. In the same samples, the real part of the conductivity is characterized by a pronounced frequency dependence. An increase in vanadium concentration is accompanied by a decrease in the effective magnetic moment of impurity atoms. The features of electron transport in PbTe:V may be caused by a variable vanadium valence and by the effect of interimpurity correlations.