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CVD of high-Tc superconductorsстатья
- Авторы: Klippe L., Stolle R., Decker W., Nürnberg A., Wahl G., Gorbenko O.Yu, Erokhin Yu Yu, Graboy I.E., Kaul A.R.
- Сборник: European conference on applied superconductivity (EUCAS); Goettingen (Germany); 4-8 October 1993
- Год издания: 1993
- Место издания: DGM Informationsges Oberursel (Germany)
- Первая страница: 407
- Последняя страница: 410
- Аннотация: Chemical Vapor Deposition generally provides the possibility of large scale production of thin superconducting films. For this purpose a process must fulfill the following criteria: - good controllability and stability of the process, - possibility of transformation from laboratory scale to industrial scale (up-scaling), - growth on technical substrates (i.e. hastelloy, polycrystalline YSZ). In conventional CVD (one thermal evaporator for each component) occur problems which limit reproducibility, scale-up possibility and controllibility of the process: - thermal instability of Ba-precursors, limitting process duration and evaporation constance, - high sensitivity on fluctuations of evaporation temperatures. To solve these problems two different single source CVD-systems have been developed. In both systems the metalorganic precursors (Y(thd)3, Ba(thd)2, Cu(thd)2) are dissolved in an organic solvent (i.e. diglyme). Thereby the ratio between the components can be adjusted very precisely and cannot change within the process time. The first system is based on an ultrasonic nebulizer as single-source evaporator. It has been connected to either a hot-wall and a cold-wall reactor. Results of our experiments using this setup are presented subsequently. The second, recently developed system utilizes a new band-evaporator, which is connected to a hot-wall reactor.
- Добавил в систему: Грабой Игорь Эдвинович