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The Impact of Postdeposition Annealing on the properties of the Indium-Fluorine-Oxide (IFO)/ n+pp+)Cz-Si/Al Solar Cellстатья
- Авторы: Untila G.G., Kost T.N., Chebotareva A.B., Zaks M.B., Sitnikov A.M., Solodukha O.I.
- Сборник: Proceedings 22nd European Photovoltaic Solar Energy Conference
- Год издания: 2007
- Место издания: WIP Munich Munich
- Первая страница: 1641
- Последняя страница: 1643
- Аннотация: Thin films of Indium-Fluorine-Oxide (IFO) were deposited by pyrosol method on specially selected defective (n+pp+)Cz-Si/Al structures with large amount of the pinholes in the emitter. The impact of the annealing in the oxygen ambient as well as in the ambient of argon with methanol vapours on the light J-U curves and on the ex-ternal spectral response was investigated. Annealing in oxygen reduced conversion efficiency for annealing tempera-tures ≥430°C mainly through the reduction of photocurrent and shunting. At that the long-wavelength response de-creased while the short-wavelength response slightly increased. Subsequent annealing in argon with methanol va-pours promoted the parameters recovery. Application of Laminated Grid Cell design to these defective structures al-lowed achieving 17.5% conversion efficiency.
- Добавил в систему: Унтила Геннадий Григорьевич