Memory effect and its switching by electric field in solid-state gas sensorsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The Au/n-SnO2/SiO/p-Si/Al heterostructures were grown using aerosol-gel and spray pyrolysis methods. The effect of capacitance memory was discovered in the presence of polar gas molecules: C2H5OH, NH3, H2O. The mechanism of gas sensitivity, capacitance memory and its switching was associated with the process taking place on the SnO2/SiO2 interface. (C) 2000 Elsevier Science S.A. All rights reserved.