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Electric-field-controlled memory effect in heterostructures for gas sensorsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Vasil'ev R.B., Rumyantseva M.N., Ryabova L.I., Akimov B.A., Gas'kov A.M., Labeau M., Langlet M.
- Журнал: Technical Physics Letters
- Том: 25
- Номер: 6
- Год издания: 1999
- Издательство: Pleiades Publishing, Ltd
- Местоположение издательства: Road Town, United Kingdom
- Первая страница: 471
- Последняя страница: 474
- DOI: 10.1134/1.1262531
- Аннотация: A capacitive gas sensor has been created on the basis of an n-SnO2/SiO2/p-Si heterostructure with two successive oxide layers. The presence of polar C2H5OH, NH3, and H2O gas molecules in air leads to a significant increase in the capacitance of the structure at room temperature. An important feature of the adsorption process is a memory effect, which is confined to the possibility of maintaining the capacitance value after removal of the active component from the gas mixture. The possibility of quenching the accumulated useful signal by electric-field pulses has been realized for the first time as applied to gas sensors. (C) 1999 American Institute of Physics. [S1063-7850(99)02006-6].
- Добавил в систему: Васильев Роман Борисович