Formation of nanoporous Ge layers by ion implantation at different temperatures of c-Ge substrateстатья
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Дата последнего поиска статьи во внешних источниках: 20 февраля 2024 г.
Аннотация:The flat monocrystalline c-Ge wafers implanted by 108Ag + ions with the energy E = 30 keV, dose D = 1.3⋅1016 ion/cm2 and at current density J = 5 μA/cm2 for various substrate temperatures from 25 to 400◦C were studied. By scanning electron microscopy and optical reflection spectroscopy it was found that as a result of ion implantation in the temperature range from 25 to 300◦C an amorphous porous Ag:PGe layers of a spongy structure consisting of Ge nanowires on the c-Ge substrate surface are formed. The diameter of Ge nanowires increases from 16 to 24 nm with a rising of substrate temperature. It is shown that at the highest temperature of 400 ◦ C, the porous structure does not form and the Ge surface remains flat, on which the formation of Ag nanoparticles can be observed. A change in the level of the sample surface in dependence on substrate temperature due to swelling up to 280◦C was replaced by effective ion sputtering at higher temperatures.