Amorphization of silicon nanowires upon irradiation with argon ions

Авторы: Kononina A.V., Balakshin Yu V., Gonchar K.A., Bozhev I.V., Shemukhin A.A., Chernysh V.S.
Журнал: Technical Physics Letters
Том: 48
Номер: 1
Год издания: 2022
Издательство: Pleiades Publishing, Ltd
Местоположение издательства: Road Town, United Kingdom
Первая страница: 53
Последняя страница: 55
DOI: 10.21883/TPL.2022.01.52470.18989
Аннотация: The irradiation of silicon nanowires with Ar+ ions with the energy of 250 keV and fluences of 1013 to 1016 cm-2 was carried out. The dependence of the destruction of the structure under ion irradiation on the fluence was investigated by Raman spectroscopy. It was shown that the amorphization of porous silicon occurs at higher values of displacement per atom than in thin silicon films. Keywords: silicon nanowires, Raman spectroscopy, defect formation.
Добавил в систему: Балакшин Юрий Викторович

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