Growth and Characterization of Centimeter-Scale Pentacene Crystals for Optoelectronic Devices

Postnikov, V.A.; Kulishov, A.A.; Yurasik, G.A.; Sorokina, N.I.; Sorokin, T.A.; Grebenev, V.V.

Авторы: Postnikov Valery A., Kulishov Artem A., Yurasik Georgy A., Sorokina Nataliya I., Sorokin Timofei A., Grebenev Vadim V.
Журнал: Crystals
Том: 13
Номер: 7
Год издания: 2023
Издательство: MDPI
Местоположение издательства: Basel, Switzerland
Первая страница: 999
Последняя страница: 999
DOI: 10.3390/cryst13070999
Аннотация: In this work, we present results on the growth of centimeter-scale pentacene crystals using the physical vapor transport method in a dual-temperature zone horizontal furnace. It wasestablished that intensive crystal growth processes occurred in transition regions with sudden temperature changes, while crystal growth was practically not observed in regions with slightly varying temperatures. During crystal growth, co-precipitating golden needle-like crystals reaching lengths of more than 10 mm were obtained. Using the method of single-crystal X-ray diffraction at 85 and 293 K for dark-blue lamellar pentacene crystals, the crystal structure was refined in a triclinic system with sp.gr. P1. It was established that the golden needle crystals consisted of molecules of the pentacene derivative—5,14-pentacenedione, the crystal structure of which was solved for the first time in a rhombic system with sp.gr. P212121. The absorption and luminescence spectra of pentacene and 5,14-pentacenedione in toluene solutions were obtained and analyzed. The electrical properties of the prepared pentacene thin films and single crystals grown under physical vapor transport conditions were evaluated by fabricating and characterizing field-effect transistors (FETs). It was shown that the presence of impurities in the commercial pentacene material had a significant effect on the morphological quality of thin polycrystalline films and noticeably reduced the hole mobility.
Добавил в систему: Постников Валерий Анатольевич

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