Аннотация:The rod structures and a single crystal film
of ZnO were grown on the silicon (100) and
sapphire (00.1) substrates by pul
sed laser deposition. The cross se
ction sizes of ZnO rods grown
at 400
0
С
and 500
0
С
are 50-270 nm and 150-400 nm, re
spectively, as th
e scan electron
measurements indicated. The low temperature p
hotoluminescence spectra of ZnO rod structures
excited by the pulsed-periodical excimer laser
(248 nm) and continuous He-Cd laser (325 nm)
have been investigated. It has been established that the rod structures of ZnO
possess nonlinear
optical amplification, which
manifests itself
in the nonlinear dependence of p
hotoluminescence
intensity versus optical
excitation power.