Аннотация:The erosion plume from the silicon target has been investigated bу the
Langmuir probe method. The YAG: Nd3+ laser (λ=1.06 μm) was used for ablation.
The time-of-flight ion curves of the plasma plume formed by crossed plumes from
two targets (crossed-beam pulsed laser deposition method (CBPLD)) and the curves
of the erosion plume from one Si target have been obtained. The research has been
performed for the probe-target distances in the 40-157 mm range. The angular
distribution of the plasma plume ions formed by crossed plumes has been obtained.
For the free of drops area the Si film thickness distribution relative to the plasma
plume axis has been received. The analysis by atomic-force microscopy (AFM)
method showed high surface quality of the obtained Si films. At 300 0C substrate
temperature the roughness does not exceed 1 nm.