|
ИСТИНА |
Войти в систему Регистрация |
ФНКЦ РР |
||
Femtosecond laser fabrication of periodic surface structures in As2S3, As2Se3 and As50Se50 thin filmsтезисы доклада
- Авторы: Zabotnov S.V., Shuleiko D.V., Kuzmin E.V., Pakholchuk P.P., Pepelayev D.V., Kozyukhin S.A., Kashkarov P.K.
- Сборник: Book of abstracts of International Conference “Functional Chalcogenides: Physics, Technology and Applications” (FunChaPTA-1)
- Тезисы
- Год издания: 2024
- Место издания: Типография ИПК МИЭТ г. Москва, г. Зеленоград
- Первая страница: 90
- Аннотация: Laser-induced periodic surface structures (LIPSSs) formed on chalcogenide vitreous semiconductors open wide prospects to create tunable and polarization-sensitive planar photonic elements. In the present work, a possibility to produce LIPSSs under femtosecond laser irradiation (300 fs, 515 nm) is demonstrated on large areas of arsenic sulfide (As2S3) and arsenic selenide (As2Se3, As50Se50) films. Scanning electron and atomic force microscopy revealed that LIPSSs with various periods (170 – 490 nm) and orientations can coexist within the same irradiated region as a hierarchical structure, resulting from the interference of various plasmon-polariton modes generated under intense photoexcitation of nonequilibrium carriers within the film. The periods and orientations of the formed structures numerically simulated using the Sipe – Drude approach. In addition, femtosecond laser irradiation provides structural transformations of As2Se3 and changes in photoluminescence spectra of the As2S3 films. The structures obtained exhibit birefringence and might be used for designing elements of polarization optics and photonic integrated circuits.
- Добавил в систему: Заботнов Станислав Васильевич