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Non-uniformly doped SOI based FETransistor with nanowire channelтезисы доклада
- Авторы: Presnov D., Miakonkikh A., Bozhjev I., Rudakov V., Trifonov A., Krupenin V.
- Сборник: Intenational Conference "Micro- and Nanoelectronics - 2014", ICMNE 2014, October 6-10, “Ershovo” resort, Moscow - Zvenigorod, Russia, Book of Abstracts,
- Тезисы
- Год издания: 2014
- Место издания: Institute of Physics and Technology of the RAS,
- Первая страница: P1-33
- Аннотация: By the help of developed process we have got the structures, where nanowire was formed from lowdoped bottom silicon layer and, at the same time, the outer electrodes have the good ohmic contact to the drain and source leads. The transport characteristics of the non-uniformly doped transistors showed a weak asymmetry in current-voltage curves and the good signal-to-noise ratio at room temperatures. Due to the wide working range one can found the most optimal working point depending on the incoming signal.
- Добавил в систему: Преснов Денис Евгеньевич