The contribution of the polariton mechanism of the surface microstructuring of silicon by picosecond laser pulsesстатья
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Дата последнего поиска статьи во внешних источниках: 30 августа 2017 г.
Аннотация:This paper discusses the experimental results of a study of the polariton mechanism of the microstructuring of silicon in the near-IR region when it is irradiated with picosecond laser pulses. The results are presented of a numerical model analysis of the excitation conditions of surface polaritons in a semiconductor when it is irradiated by a single picosecond pulse. It is determined that the polariton microstructuring mechanism of silicon has low probability when a picosecond laser pulse acts on it.