Аннотация:Technologically relevant narrow gap Hg1-xCdxTe is known to contain a considerable amount of mercury vacancies that supposedly degrade carrier lifetimes. Using semiclassical approach with no adjustable parameters, we calculate capture coefficients for acceptor states with different binding energy. Resulting Shockley–Read–Hall recombination times agree well with the experimental data and suggest that operating temperature of Hg1-xCdxTe detectors with ~ 20 µm cutoff can be elevated above 77 K.
