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Nonstoichiometry problems of ZnSe: From single crystals to nanofilmsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 13 сентября 2017 г.
- Авторы: Avetissov Igor, Khanh Tran, Saifutyarov Rasim, Mozhevitina Elena, Khomyakov Andrew, Avetisov Roman, Davydov Albert, Neustroev Sergei, Zhavoronkov Nikolai
- Журнал: Thin Solid Films
- Том: 613
- Год издания: 2016
- Издательство: Elsevier Sequoia
- Местоположение издательства: Switzerland
- Первая страница: 11
- Последняя страница: 18
- DOI: 10.1016/j.tsf.2015.10.067
- Аннотация: Selenium nonstoichiometry in ZnSe under bivariant and monovariant equilibriums was studied by a direct physical–chemical method. ZnSe single crystals grown from the melt and the vapor phase were used as starting materials. It was found out that at T > 720 K, overstoichiometric Se generates mainly electrically neutral defects. ZnSe thin films (50–300 nm) were prepared by vacuum thermal sputtering on “cold” glass substrates. To control the nonstoichiometry of the films, a specially designed two-chamber evaporator was used. The nonstoichiometry, electrical properties and morphology of the ZnSe films were investigated under various preparation conditions. It was demonstrated that it is possible to form p–n junction by varying the nonstoichiometry of ZnSe nanofilms.
- Добавил в систему: Сайфутяров Расим Рамилевич
Прикрепленные файлы
| № | Имя | Описание | Имя файла | Размер | Добавлен |
|---|---|---|---|---|---|
| 1. | Полный текст | 2015_Avetissov_ZnSe_nanofilms.pdf | 3,6 МБ | 16 ноября 2017 [Avetisov] |