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Heavy and light holes states mixing and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1 xAs nanostructures under uniaxial compressionстатья
- Авторы: Bogdanov E.V., Marintsev P.S., Minina N.Ya, Mironov D.E., Shirokov S.S.
- Сборник: Reviews and short notes. Proceedings of NANOMEETING-2011. Minsk, Belarus, 24 - 27 May, 2011
- Год издания: 2011
- Место издания: World Scientific Pub. Co. Pte. Ltd Singapore, Singapore
- Первая страница: 211
- Последняя страница: 214
- Аннотация: Numerical calculations of the valence band and conduction band size quantized levels in a strained p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs (y=0.16) double heterostructure were performed for different values of the external uniaxial compression along [110] direction. The results of calculations explain the nonlinear character of the photon energy shift and electroluminescence intensity increase that were experimentally observed in these structures under uniaxial compression up to 5 kbar.
- Добавил в систему: Богданов Евгений Владимирович