|
ИСТИНА |
Войти в систему Регистрация |
ФНКЦ РР |
||
Structural and electrophysical properties of femtosecond laser exposed hydrogenated amorphous silicon filmsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 26 января 2017 г.
- Авторы: Emelyanov Andrey V., Khenkin Mark V., Kazanskii Andrey G., Forsh Pavel A., Kashkarov Pavel K., Lyubin Evgeny V., Khomich Andrey A., Mindaugas Gecevicius, Martynas Beresna, Kazansky Peter G.
- Журнал: Proceedings of SPIE - The International Society for Optical Engineering
- Том: 8438
- Год издания: 2012
- Издательство: SPIE, the International Society for Optical Engineering
- Местоположение издательства: Bellingham, WA, United States
- Первая страница: 84381I-1
- Последняя страница: 84381I-8
- DOI: 10.1117/12.922896
- Аннотация: This paper studies the effect of femtosecond laser treatment in air of hydrogenated amorphous silicon thin films (a-Si:H) on their structural, electrical and photoelectric properties. The possibility of laser-induced crystallization of a-Si:H films with controlled crystalline volume fraction was shown. A sufficient increase of dark conductivity was observed for laser treated a-Si:H films which crystallinity exceeds 7%. Such increase was attributed to change in conductivity mechanism. However, spectral dependences of absorption coefficient did not show any qualitative changes with the laser fluence increase. It was found that spallation and oxidation of the film took place when laser fluence became reasonably high.
- Добавил в систему: Емельянов Андрей Вячеславович