Optical spectroscopy of Ce3+ ions in Gd3(AlxGa1-x)5O12 epitaxial filmsстатья
Статья опубликована в высокорейтинговом журнале
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Дата последнего поиска статьи во внешних источниках: 20 января 2015 г.
Аннотация:Epitaxial films of Ce-doped Gd3(AlxGa1-x)5O12 with x = 0.00, 0.22, 0.31, 0.38 formula units were grown using liquid-phase epitaxy method, and their optical properties were studied. The emission of Ce3+ ions can be observed only when Al3+ ions are incorporated into the garnet structure, resulting in a shift of the 5d Ce3+ states from the conduction band to the bandgap. It is shown that the shift is caused by the cumulative effect of gradual low-energy shift of the lowest 5d level of Ce3+ and the raise of the garnet bandgap energy with increasing Al3+ concentration.