Deep Tellurium Purification for the Production of Electronic and Photonic Materials

Grishechkin, M.B.; Mozhevitina, E.N.; Khomyakov, A.V.; Zykova, M.P.; Avetisov, R.I.; Avetissov, I.K.

Авторы: Grishechkin M.B., Mozhevitina E.N., Khomyakov A.V., Zykova M.P., Avetisov R.I., Avetissov I.Kh
Журнал: Russian Microelectronics
Том: 46
Номер: 8
Год издания: 2017
Издательство: Maik Nauka/Interperiodica Publishing
Местоположение издательства: Russian Federation
Первая страница: 551
Последняя страница: 556
DOI: 10.1134/S1063739717080078
Аннотация: To carry out the process of obtaining high-purity tellurium by the vacuum distillation method, a reactor design consisting of high-purity quartz glass and graphite is proposed. During the process, the tellurium melt evaporates; and the vapor is transferred from the hot part of the system to the colder one and condenses in the form of a solid phase (distillate) without the formation of a liquid. Regularities in the redistribution of impurities between the distillate and the cube stillage residue, as well as the spatial distribution of impurities in the distillate during the purification of metallic tellurium, are studied. It is established that some impurities, for example, s-metals, Zn, Ni, and V, and rare metals, are distributed uniformly along the length (20 cm) of the distillate. At the same time, Se tends to concentrate in the far (from the still) part of the distillate with a difference of more than one order of magnitude than in the near part.
Добавил в систему: Аветисов Игорь Христофорович

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