|
ИСТИНА |
Войти в систему Регистрация |
ФНКЦ РР |
||
Contact resistance of indium tin oxide and fluorine-doped indium oxide films grown by ultrasonic spray pyrolysis to diffusion layers in silicon solar cellsстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 9 июня 2015 г.
- Авторы: Untila G.G., Kost T.N., Chebotareva A.B., Kireeva E.D.
- Журнал: Solar Energy Materials and Solar Cells
- Том: 137
- Год издания: 2015
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 26
- Последняя страница: 33
- DOI: 10.1016/j.solmat.2015.01.018
- Аннотация: A simple method is described for estimating the contact resistance between a transparent conducting oxide film and a diffusion layer in a silicon solar cell. We have investigated the effect of film growth temperature on the contact resistance between n++-Si and p++-Si layers and In2O3:Sn (ITO) and In2O3:F (IFO) films grown by ultrasonic spray pyrolysis. The effect of growth temperature on the properties of the SiOx layer in IFO/SiOx/n++-Si structures has been studied by Fourier transform infrared absorption spectroscopy. The process for IFO deposition on n++-Si layers has been modified in order to reduce the IFO/SiOx/n++-Si contact resistance. The use of modified IFO has reduced the series resistance of an ITO/(p++nn++)Cz-Si/IFO bifacial solar cell for low-concentration applications by 0.13 Ωcm2, from 0.39 to 0.26 Ωcm2; extended its operating range of concentration ratios by a factor of 1.5, from 1–3.5× to 1–5.3×; and improved its efficiency in the operating range from 17.6–17.9 to 17.7–18.2%
- Добавил в систему: Унтила Геннадий Григорьевич