|
ИСТИНА |
Войти в систему Регистрация |
ФНКЦ РР |
||
The influence of δ--layer's magnetization on polarization of photoluminescence of quantum well in singular and vicinal InGaAs/GaAs/δ- heterostructuresстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Дата последнего поиска статьи во внешних источниках: 8 февраля 2015 г.
- Авторы: Dmitriev A.I., Talantsev A.D., Zaitsev S.V., Koplak O.V., Morgunov R.B.
- Журнал: Journal of Physics: C
- Том: 345
- Номер: 1
- Год издания: 2012
- Первая страница: 012014
- Последняя страница: 012016
- DOI: 10.1088/1742-6596/345/1/012014
- Аннотация: Magneto-optical properties and spin dynamics in a p-type GaAs-based heterostructures containing an InGaAs quantum well and 2 nm thick GaAs layer doped with 5 at. % Mn (GaAs:Mn) on flat and vicinal substrates were studied between 2 and 300 K. A significant enhancement of photoluminescence circular polarization PC = 15 % was found at temperatures T < 30 K. In the non-magnetic quantum well PC = 0 %. The polarization of the InGaAs quantum well photoluminescence follows the temperature dependence of the GaAs:Mn layer magnetization. Two types of ferromagnetism were found. In the heterostructures grown on the flat substrate parallel to the (001) GaAs plane the magnetization obeys the Bloch T 3/2 temperature dependence while for the structures grown on the vicinal surface (disoriented by 3°) the magnetization follows percolation dependence. The later is attributed to the formation of strongly disordered islands of GaAs:Mn.
- Добавил в систему: Моргунов Роман Борисович