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High-temperature quantum oscillations of the Hall resistance in bulk Bi2Se3статья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 29 января 2018 г.
- Авторы: Busch M., Chiatti O., Pezzini S., Wiedmann S., Sánchez-Barriga J., Rader O., Yashina L., Fischer S.
- Журнал: Scientific reports
- Том: 8
- Год издания: 2018
- Издательство: Nature Publishing Group
- Местоположение издательства: United Kingdom
- Первая страница: 485
- DOI: 10.1038/s41598-017-18960-0
- Аннотация: Helically spin-polarized Dirac fermions (HSDF) in protected topological surface states (TSS) are of high interest as a new state of quantum matter. In three-dimensional (3D) materials with TSS, electronic bulk states often mask the transport properties of HSDF. Recently, the high- eld Hall resistance and low- eld magnetoresistance indicate that the TSS may coexist with a layered two-dimensional electronic system (2DES). Here, we demonstrate quantum oscillations of the Hall resistance at temperatures up to 50 K in nominally undoped bulk Bi2Se3 with a high electron density n of about 2·1019 cm−3. From the angular and temperature dependence of the Hall resistance and the Shubnikov-de Haas oscillations we identify 3D and 2D contributions to transport. Angular resolved photoemission spectroscopy proves the existence of TSS. We present a model for Bi2Se3 and suggest that the coexistence of TSS and 2D layered transport stabilizes the quantum oscillations of the Hall resistance.
- Добавил в систему: Яшина Лада Валерьевна