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Статьи в журналах
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- 2011 High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3 gate stack
- Minamisawa R.A., Schmidt M., Durgun Özben E., Lopes J.M.J, Hartmann J.M., Bourdelle K.K., Schubert J., Zhao Q.T., Buca D., Mantl S.
- в журнале Microelectronic Engineering, издательство Elsevier BV (Netherlands), том 88, № 9, с. 2955-2958 DOI